Water
mark occurred during the process of Cleaning & Dry
on pattern wafer formed as multi
film layer for the process of STI (Shallow
Trench Isolation)
Water
mark occurred during the process of Clean & Dry
on pattern wafer formed as deep
contact hole layer for the process of
Plug poly
Water
Mark occurred when the pattern density of surface goes
up during the process of Capacitor
as a cylinder Type. The capacitor node
shift phenomenon is occurred by the water mark formed
in former step.
Water
mark occurred during the process of Cleaning & Dry
on pattern wafer formed as multi
film layer for the process of STI (Shallow
Trench Isolation)
